| PART |
Description |
Maker |
| GLT4160M04-60J3 GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| A42L8316 A42L8316S A42L8316S-30 A42L8316V-30U A42L |
40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| A42L2604S-45L A42L2604S-50L A42L2604V-45L A42L2604 |
45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMIC Technology
|
| K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
| IC41C82052 IC41LV82052 IC41LV82052-60T IC41C82052- |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-PDIP -40 to 85 200万86兆），充满活力和快速页面模式内
|
ICSI[Integrated Circuit Solution Inc]
Omron Electronics, LLC
|
| IC42S16100 IC42S16100-5T IC42S16100-6TG |
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
DYNAMIC RAM, SDRAM
|
Integrated Circuit Solu...
ICSI
|
